Title :
Ga(In)AsN growth by plasma-assisted molecular beam epitaxy towards 1.3 μm and 1.55 μm [lasers]
Author :
Wang, S.Z. ; Yoon, S.F. ; Ng, T.K. ; Loke, W.K. ; Sun, Z.Z. ; Yew, K.C. ; Fan, W.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Ga(In)AsN is grown by molecular beam epitaxy using either a direct nitrogen beam or dispersive nitrogen radicals generated by a radio-frequency activated nitrogen source. The nitrogen incorporation shows a linear dependence on the RF power in a dispersive growth mode, contrasted to a saturated behavior in a direct growth mode. An additional indium flux causes a decrease in the nitrogen composition, an effect resulting from the increase in the growth rate. Quality Ga(In)AsN quantum wells were grown at 460°C, with a photoluminescence emission close to 1.6 μm. Also reported is a PL result amongst the best, as compared with the literature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; semiconductor quantum wells; 1.3 micron; 1.55 micron; 1.6 micron; 460 degC; Ga(In)AsN; RF power; direct growth mode; direct nitrogen beam; dispersive growth mode; dispersive nitrogen radicals; photoluminescence emission; plasma-assisted molecular beam epitaxy; quantum wells; radio-frequency activated nitrogen source; saturated behavior; semiconductor lasers; Dispersion; Distributed power generation; Laser beams; Laser modes; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Nitrogen; Plasma sources; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014598
