Title :
Design optimization of GNR tunneling-FETs for low voltage operation using EHT-based NEGF simulation
Author :
Guan, Ximeng ; Huang, Shengxi ; Kang, Jiahao ; Zhang, Jinyu ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green´s Function (NEGF) approach using Extended Hiickel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a bandgap of down to 0.5eV, while still keeping small subthreshold swing (less than 60 mV/dec) and high Ion/Ioff ratio. This also lowers the performance sensitivity on GNR width and enables the application of GNR-TFETs in low-power circuits.
Keywords :
Green´s function methods; field effect transistors; low-power electronics; nanostructured materials; nanotechnology; semiconductor doping; sensitivity analysis; tunnelling; EHT-based Hamiltonian; EHT-based NEGF simulation; GNR tunneling-FET; bandgap; design optimization; extended Hiickel theory; graphene nanoribbon tunneling-FET; low voltage operation; low-power circuit; nonequilibrium Green function; performance sensitivity; source-drain doping; Doping; Logic gates; Materials; Performance evaluation; Photonic band gap; Switches; Tunneling;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677982
