Lasing operation under pulsed optical pumping of 1.55 μm external-cavity VCSELs using an InP/AlGaInAs bottom Bragg reflector

Author

Symonds, C. ; Saint-Girons, G. ; Sagnes, I. ; Mereuta, A. ; Oudar, J.L.

Author_Institution

Lab. de Photonique et de Nanostructures, LPN-CNRS, Marcoussis, France

fYear

2002

fDate

2002

Firstpage

663

Lastpage

666

Abstract

We present half vertical cavity surface emitting lasers (VCSELs), based on a new type of InP/AlGaInAs distributed Bragg reflector (DBR) and on InAlAs/AlGaInAs DBR. Lasing effect under pulsed optical pumping in external cavity configuration was obtained. A comparison between these two materials systems is presented, as well as a first step in the design of the active cavity in order to optimize the absorption for the optical pumping.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; optical pumping; semiconductor lasers; surface emitting lasers; 1.55 micron; InP-AlGaInAs; InP/AlGaInAs; active cavity; bottom Bragg reflector; distributed Bragg reflector; external-cavity VCSELs; lasing operation; optical pumping; pulsed optical pumping; Distributed Bragg reflectors; Indium compounds; Indium phosphide; Optical design; Optical materials; Optical pulses; Optical pumping; Pump lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014602

Filename

1014602