• DocumentCode
    1892866
  • Title

    Auger lifetime in narrow gap semiconductors

  • Author

    Bertazzi, Francesco ; Goano, Michele ; Bellotti, Enrico

  • Author_Institution
    Dipt. di Elettron., Politec. di Torino, Torino, Italy
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Direct and phonon-assisted Auger recombination mechanisms are investigated in the framework of perturbation theory by using accurate electron and phonon dispersion relations. It is found that Auger recombination in narrow gap semiconductors is appreciably enhanced by phonon-assisted processes.
  • Keywords
    Auger effect; II-VI semiconductors; cadmium compounds; electron-hole recombination; electron-phonon interactions; mercury compounds; narrow band gap semiconductors; perturbation theory; phonon dispersion relations; Hg0.78Cd0.22Te; electron-phonon dispersion relations; narrow-gap semiconductors; perturbation theory; phonon-assisted Auger recombination mechanisms; phonon-assisted processes; Charge carrier processes; Impact ionization; Optical scattering; Phonons; Photonic band gap; Radiative recombination;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5677985
  • Filename
    5677985
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1892866