Title :
Auger lifetime in narrow gap semiconductors
Author :
Bertazzi, Francesco ; Goano, Michele ; Bellotti, Enrico
Author_Institution :
Dipt. di Elettron., Politec. di Torino, Torino, Italy
Abstract :
Direct and phonon-assisted Auger recombination mechanisms are investigated in the framework of perturbation theory by using accurate electron and phonon dispersion relations. It is found that Auger recombination in narrow gap semiconductors is appreciably enhanced by phonon-assisted processes.
Keywords :
Auger effect; II-VI semiconductors; cadmium compounds; electron-hole recombination; electron-phonon interactions; mercury compounds; narrow band gap semiconductors; perturbation theory; phonon dispersion relations; Hg0.78Cd0.22Te; electron-phonon dispersion relations; narrow-gap semiconductors; perturbation theory; phonon-assisted Auger recombination mechanisms; phonon-assisted processes; Charge carrier processes; Impact ionization; Optical scattering; Phonons; Photonic band gap; Radiative recombination;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5677985
