DocumentCode :
1892995
Title :
CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
Author :
Velasco-Velez, J.J. ; Doll, T. ; Chaiyboun, A. ; Wilbertz, C. ; Woellenstein, J. ; Bauersfeld, M.
Author_Institution :
Inst. for Physic, Johannes-Gutenberg-Univ., Mainz
fYear :
2008
fDate :
26-29 Oct. 2008
Firstpage :
106
Lastpage :
109
Abstract :
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.
Keywords :
CMOS integrated circuits; annealing; gas sensors; CMOS compatible field effect nanoscale gas sensor; Fokker-Planck; Poisson; Wolkenstein; annealing models; plausible Drift explanation; Annealing; Contacts; Electrons; Gas detectors; Insulation; Laplace equations; Poisson equations; Substrates; Temperature sensors; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2008 IEEE
Conference_Location :
Lecce
ISSN :
1930-0395
Print_ISBN :
978-1-4244-2580-8
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2008.4716394
Filename :
4716394
Link To Document :
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