DocumentCode :
18930
Title :
MSM Varactor Diodes Based on 
HEMTs With Cut-Off Frequency of 908 GHz
Author :
Seung Heon Shin ; Dae-Myeong Geum ; Jae-hyung Jang
Author_Institution :
Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
35
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
172
Lastpage :
174
Abstract :
Metal-semiconductor-metal varactor diodes were realized on the 2-D electron gas (2DEG) of an In0.7Ga0.3As HEMT structure. The electrical performances, such as capacitance switching ratio (Cmax/Cmin) and cutoff frequency (fo), were determined by using S-parameters measurements up to 40 GHz. Devices with 130-nm gate length and a gate distance of 2 μm exhibited a cutoff frequency (fo) of 908 GHz and a capacitance switching ratio of 1.4. The corresponding figure of merit, which is defined as fo·Cmax/Cmin, was 1.29 THz.
Keywords :
III-V semiconductors; S-parameters; gallium arsenide; high electron mobility transistors; indium compounds; metal-semiconductor-metal structures; millimetre wave diodes; millimetre wave transistors; two-dimensional electron gas; varactors; 2D electron gas; 2DEG; HEMT structure; In0.7Ga0.3As; MSM varactor diodes; S-parameters measurement; capacitance switching ratio; cutoff frequency; distance 2 mum; electrical performance; figure of merit; frequency 1.29 THz; frequency 908 GHz; metal semiconductor metal varactor diodes; size 130 nm; Annealing; Cutoff frequency; HEMTs; Indium phosphide; Logic gates; MODFETs; Varactors; InGaAs; InP; Schottky contact; buried-Pt gate; high electron mobility transistor (HEMT); metal–semiconductor–metal (MSM)-2DEG varactors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2292933
Filename :
6680665
Link To Document :
