´ab initio´ surface roughness scattering in 3D Monte Carlo transport simulations

Author

Alexander, C. ; Asenov, A.

Author_Institution

Dept. Electron. & Electr. Eng., Univ. of Glasgow, Glasgow, UK

fYear

2010

fDate

26-29 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

Density gradient quantum corrected 3D Monte Carlo simulation of electron inversion layer transport is carried out in the presence of a statistically accurate discrete rough surface. Surface roughness scattering is included in all simulations not through a scattering rate or boundary condition model, but through the direct propagation of carriers in the effective quantum potential associated with the unique surface. Calibration of the statistical surface and density gradient effective mass parameters allows excellent agreement with experimental universal mobility measurements.

Keywords

MOS capacitors; Monte Carlo methods; ab initio calculations; carrier mobility; inversion layers; semiconductor doping; surface roughness; 3D Monte Carlo simulation; Si; ab initio surface roughness scattering; carrier mobility; carrier propagation; density gradient quantum correction; electron inversion layer transport; Electric potential; Logic gates; Rough surfaces; Scattering; Semiconductor process modeling; Substrates; Surface roughness; Monte Carlo; ab initio; density gradient; surface roughness; universal mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2010 14th International Workshop on

Conference_Location

Pisa

Print_ISBN

978-1-4244-9383-8

Type

conf

DOI

10.1109/IWCE.2010.5677990

Filename

5677990