Title :
Plasma charging damage - where do we stand?
Author_Institution :
Electr. & Comput. Eng., Rutgers Univ., New Brunswick, NJ, USA
Abstract :
A few years ago, plasma charging damage was a serious yield and reliability problem in the silicon integrated circuit (IC) industry. Recently, its importance appears to diminish as technology continues to advance. In this paper, we take a closer look at this trend and discuss the reason behind it. Clearly, the opportunity to introduce plasma charging damage is increasing as technology evolves.
Keywords :
integrated circuit reliability; integrated circuit yield; plasma density; plasma materials processing; integrated circuit reliability; integrated circuit yield; plasma charging damage; silicon integrated circuit industry; Degradation; Electric breakdown; Electrons; Impact ionization; Integrated circuit technology; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Stress;
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
DOI :
10.1109/ICICDT.2005.1502598
