Title :
Charging damage and SOI
Author :
Hook, Terence B.
Author_Institution :
IBM Microelectron., Essex Junction, VT, USA
Abstract :
SOI technologies offer the highest possible performance in today´s silicon spectrum, and are used for the very fastest processor requirements. In addition to the high speed achievable with this technology, there is also unusually high robustness against inline charging damage. In this paper, we review data and theories pertinent to SOI charging immunity and design rules.
Keywords :
silicon-on-insulator; SOI charging immunity; SOI technologies; charging damage; processor requirements; silicon spectrum; silicon-on-insulator; Conductors; Degradation; Diodes; Microelectronics; Plasmas; Robustness; Shape; Silicon; Transistors; Voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
DOI :
10.1109/ICICDT.2005.1502599
