Title :
Molecular beam epitaxial growth and characterization of In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structures on InP substrates
Author :
Amano, M. ; Kawamura, Y. ; Fujimoto, M. ; Yokoyama, T. ; Inoue, N.
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
Abstract :
In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structures were grown on InP substrates by molecular beam epitaxy. Exciton peaks were observed at 300 K for InGaAsSb/InAlAs strained multiple quantum well (MQW) structures with the Sb mole fraction up to 0.11. The photoluminescence (PL) intensity of the strained MQW structures is comparable to that of an InGaAs/InAlAs MQW structure lattice-matched to InP substrate. A strong emission at 2.08 μm was observed at 11 K for InGaAsSb/InAlAs strained single quantum well (SQW) structure.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; 11 K; 2.08 micron; 300 K; In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structure; InGaAsSb-In0.52Al0.48As; InP; InP substrate; exciton; molecular beam epitaxial growth; photoluminescence intensity; Epitaxial growth; Gas lasers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014614
