• DocumentCode
    1893104
  • Title

    Molecular beam epitaxial growth and characterization of In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structures on InP substrates

  • Author

    Amano, M. ; Kawamura, Y. ; Fujimoto, M. ; Yokoyama, T. ; Inoue, N.

  • Author_Institution
    Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
  • fYear
    2002
  • fDate
    2002
  • Firstpage
    697
  • Lastpage
    700
  • Abstract
    In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structures were grown on InP substrates by molecular beam epitaxy. Exciton peaks were observed at 300 K for InGaAsSb/InAlAs strained multiple quantum well (MQW) structures with the Sb mole fraction up to 0.11. The photoluminescence (PL) intensity of the strained MQW structures is comparable to that of an InGaAs/InAlAs MQW structure lattice-matched to InP substrate. A strong emission at 2.08 μm was observed at 11 K for InGaAsSb/InAlAs strained single quantum well (SQW) structure.
  • Keywords
    III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; 11 K; 2.08 micron; 300 K; In1-xGaxAs1-ySby/In0.52Al0.48As strained quantum well structure; InGaAsSb-In0.52Al0.48As; InP; InP substrate; exciton; molecular beam epitaxial growth; photoluminescence intensity; Epitaxial growth; Gas lasers; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Photoluminescence; Quantum well devices; Quantum well lasers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-7320-0
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2002.1014614
  • Filename
    1014614
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1893104