Effect on lattice parameter and optical band gap of thallium incorporation in a GaInAs matrix

Author

Regreny, P. ; Sánchez-Almazán, F. ; Beneyton, R. ; Gendry, M. ; Grenet, G. ; Hollinger, G. ; Olivares, J. ; Sibaï, A. ; Guillot, G. ; Bremond, G.

Author_Institution

LEOM, Ecole Centrale de Lyon, Ecully, France

fYear

2002

fDate

16-16 May 2002

Firstpage

705

Lastpage

708

Abstract

Using low temperature molecular beam epitaxy, we report the growth of thin layers of (Ga_1-yIn_y)_1-xTl_xAs alloys on InP(001) substrates with thallium incorporation rates up to 12%. The lattice parameters and band gaps of these layers have been determined using Double Crystal X-ray diffraction and optical absorption techniques, respectively. The so-obtained experimental results are found to match the theoretical values predicted by Van Schilfgaarde et a1 for TlAs lattice parameter and band gap.

Keywords

III-V semiconductors; X-ray diffraction; energy gap; gallium arsenide; indium compounds; lattice constants; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; thallium compounds; (Ga/sub 1-y/In/sub y/)/sub 1-x/Tl/sub x/As; InP; band gaps; double crystal X-ray diffraction; lattice parameter; low temperature molecular beam epitaxy; optical absorption techniques; optical band gap; Indium phosphide; Lattices; Mass spectroscopy; Molecular beam epitaxial growth; Optical buffering; Optical films; Optical materials; Photonic band gap; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Conference_Location

Stockholm, Sweden

ISSN

1092-8669

Print_ISBN

0-7803-7320-0

Type

conf

DOI

10.1109/ICIPRM.2002.1014616

Filename

1014616