DocumentCode
1893230
Title
Antimony-based III-V materials grown by OMVPE for thermophotovoltaics and lasers
Author
Wang, C.A.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
fYear
2002
fDate
2002
Firstpage
709
Lastpage
712
Abstract
This paper discusses recent advances in organometallic vapor phase epitaxy (OMVPE) growth of GaInAsSb and AlGaAsSb alloys, with a particular emphasis on identifying growth conditions that lead to improvements in material quality and heterostructure growth. Furthermore, the performance of thermophotovoltaic (TPV) devices, distributed Bragg reflectors, and quantum-well diode lasers based on GaInAsSb/AlGaAsSb/GaSb heterostructures is described.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; thermophotovoltaic cells; vapour phase epitaxial growth; AlGaAsSb; AlGaAsSb alloy; GaInAsSb; GaInAsSb alloy; GaInAsSb-AlGaAsSb-GaSb; GaInAsSb/AlGaAsSb/GaSb heterostructure; III-V material; OMVPE growth; distributed Bragg reflector; quantum well diode laser; thermophotovoltaic device; Epitaxial growth; Gas lasers; III-V semiconductor materials; Lead; Optical materials; Semiconductor lasers; Semiconductor materials; Substrates; Temperature; Tin alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
ISSN
1092-8669
Print_ISBN
0-7803-7320-0
Type
conf
DOI
10.1109/ICIPRM.2002.1014618
Filename
1014618
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