Title :
Antimony-based III-V materials grown by OMVPE for thermophotovoltaics and lasers
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
This paper discusses recent advances in organometallic vapor phase epitaxy (OMVPE) growth of GaInAsSb and AlGaAsSb alloys, with a particular emphasis on identifying growth conditions that lead to improvements in material quality and heterostructure growth. Furthermore, the performance of thermophotovoltaic (TPV) devices, distributed Bragg reflectors, and quantum-well diode lasers based on GaInAsSb/AlGaAsSb/GaSb heterostructures is described.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; thermophotovoltaic cells; vapour phase epitaxial growth; AlGaAsSb; AlGaAsSb alloy; GaInAsSb; GaInAsSb alloy; GaInAsSb-AlGaAsSb-GaSb; GaInAsSb/AlGaAsSb/GaSb heterostructure; III-V material; OMVPE growth; distributed Bragg reflector; quantum well diode laser; thermophotovoltaic device; Epitaxial growth; Gas lasers; III-V semiconductor materials; Lead; Optical materials; Semiconductor lasers; Semiconductor materials; Substrates; Temperature; Tin alloys;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014618
