A mass-matrix solution based frequency-domain finite-element method

An on-chip structure with conductor loss is simulated to verify the proposed method. The cross section of the structure is shown in Fig. 1(a). The shaded area denotes the conducting region with conductivity 5.0e7 S/m. The length of the structure is 4 μm. In the simulation, At is chosen to be le-16. Only the first 3 terms are required in the expansion shown in (16). From 1 GHz to 50 GHz, the S-parameters of this structure are extracted, which are shown in Fig. 1(b) and (c). We compare the result with that generated by a layered FEM method which was validated in [2]. Excellent agreement can be observed.