• DocumentCode
    1893355
  • Title

    Advanced T-matrix method for quantum simulation of nanoscale field-effect transistors

  • Author

    Semenikhin, I. ; Vyurkov, V. ; Orlikovsky, A.

  • Author_Institution
    Inst. of Phys. & Technol., RAS, Moscow, Russia
  • fYear
    2010
  • fDate
    26-29 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    To cope with the well-known simulation encumbrance caused by evanescent modes in a nonuniform quantum waveguide we employed an arbitrary (multiprecision) arithmetic incorporated in T-matrix method for simulation of nanoscale field-effect transistors..
  • Keywords
    Schrodinger equation; eigenvalues and eigenfunctions; field effect transistors; nanotechnology; silicon-on-insulator; advanced T-matrix method; nanoscale field-effect transistors; quantum simulation; Impurities; Logic gates; Mathematical model; Scattering; Semiconductor process modeling; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2010 14th International Workshop on
  • Conference_Location
    Pisa
  • Print_ISBN
    978-1-4244-9383-8
  • Type

    conf

  • DOI
    10.1109/IWCE.2010.5678001
  • Filename
    5678001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1893355