Title :
Advanced T-matrix method for quantum simulation of nanoscale field-effect transistors
Author :
Semenikhin, I. ; Vyurkov, V. ; Orlikovsky, A.
Author_Institution :
Inst. of Phys. & Technol., RAS, Moscow, Russia
Abstract :
To cope with the well-known simulation encumbrance caused by evanescent modes in a nonuniform quantum waveguide we employed an arbitrary (multiprecision) arithmetic incorporated in T-matrix method for simulation of nanoscale field-effect transistors..
Keywords :
Schrodinger equation; eigenvalues and eigenfunctions; field effect transistors; nanotechnology; silicon-on-insulator; advanced T-matrix method; nanoscale field-effect transistors; quantum simulation; Impurities; Logic gates; Mathematical model; Scattering; Semiconductor process modeling; Silicon; Transistors;
Conference_Titel :
Computational Electronics (IWCE), 2010 14th International Workshop on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-9383-8
DOI :
10.1109/IWCE.2010.5678001
