Title :
InAs-QD growth and its application for long-wavelength lasers
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
Uniform self-assembled quantum dots of InAs were grown with high density on both GaAs and InP substrates. The dots were used in fabricating 1.3-μm lasers on the GaAs substrates and 1.55-μm lasers on the InP substrates. We applied p-type doping of the active region to increase the modulation bandwidth of the QD laser by up to 5 GHz. The QD laser had a very low level of chirp in its lasing wavelength during direct modulation at 2.5 GHz.
Keywords :
III-V semiconductors; chirp modulation; indium compounds; quantum well lasers; self-assembly; semiconductor growth; semiconductor quantum dots; 1.3 micron; 1.55 micron; 2.5 GHz; GaAs; GaAs substrate; InAs; InAs self-assembled quantum dot growth; InP; InP substrate; chirp; direct modulation; long-wavelength laser; modulation bandwidth; p-type doping; Bandwidth; Chirp modulation; Gallium arsenide; Indium phosphide; Laser applications; Molecular beam epitaxial growth; Quantum dot lasers; Shape; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th
Print_ISBN :
0-7803-7320-0
DOI :
10.1109/ICIPRM.2002.1014625
