Title :
A DC and small signal model for high electron mobility transistors
Author :
Ahn, Hyungkeun ; El Nokali, Mahmoud
Author_Institution :
Dept. of Electr. Eng., Pittsburgh Univ., PA, USA
Abstract :
A new model is presented for high electron mobility transistors (HEMTs). It is based on a single analytical function that describes the electron concentrations in the two-dimensional electron gas and in the AlGaAs layer. The model results in closed-form expressions for the current, transconductance and output conductance. The theoretical predictions of the model are compared with experimental data and shown to be in good agreement over a wide range of bias conditions
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; AlGaAs layer; DC model; HEMT; closed-form expressions; electron concentrations; high electron mobility transistors; output conductance; semiconductor; single analytical function; small signal model; transconductance; two-dimensional electron gas; Electrons; Gallium arsenide; HEMTs; Integral equations; MODFETs; Photonic band gap; Poisson equations; Potential well; Temperature; Transconductance;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
Print_ISBN :
0-7803-0990-1
DOI :
10.1109/UGIM.1993.297017
