Title :
Subthreshold analysis of floating-gate MOSFET´s
Author :
Yang, Kewei ; Andreou, Andreas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., John Hopkins Univ., Baltimore, MD, USA
Abstract :
An analytical model for subthreshold operation of floating-gate MOSFETs is presented. The authors; first-order analysis shows exponential dependence between the current and drain-to-substrate and source-to-substrate voltages; this is confirmed by experimental data. A small-signal model is presented for the common source configuration. Methods for adjusting the charge on the floating gate are also discussed
Keywords :
CMOS integrated circuits; VLSI; insulated gate field effect transistors; semiconductor device models; CMOS technology; analytical model; common source configuration; digital VLSI; exponential dependence; first-order analysis; floating gate MOSFET; small-signal model; subthreshold operation; Analytical models; CMOS technology; Capacitance; MOSFET circuits; Neuromorphics; Power system modeling; Read only memory; Semiconductor device modeling; Very large scale integration; Voltage control;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial
Conference_Location :
Research Triangle Park, NC
Print_ISBN :
0-7803-0990-1
DOI :
10.1109/UGIM.1993.297019
