Title :
Single-metal gate multi-bridge-channel MOSFET (MBCFET) for CMOS application
Author :
Sung-Young Lee ; Min-Sang Kim ; Eun-Jung Yoon ; Sung-Dae Suk ; Sung-min Kim
Author_Institution :
Semicond. R & D Center, Samsung Electron. Co., Yonein, South Korea
Abstract :
Simplifying the MBCFET process further, the authors have successfully fabricated single-metal-gate CMOS MBCFET. Due to channel engineering, the symmetric threshold voltage of 0.25V and -0.22V for single TiN-gate n-channel MBCFET (nMBCFET) and p-channel MBCFET (pMBCFET), could be achieved respectively.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit manufacture; titanium compounds; -0.22 V; 0.25 V; CMOS; TiN; channel engineering; single metal gate multibridge channel MOSFET; symmetric threshold voltage; CMOS process; Capacitance; Etching; Fabrication; Germanium silicon alloys; MOSFET circuits; Manufacturing processes; Silicon compounds; Silicon germanium; Threshold voltage;
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
DOI :
10.1109/ICICDT.2005.1502629
