DocumentCode
1893894
Title
Interface trap density energy profiles D it(E ) in fully depleted SIMOX MOSFET´s by dynamic transconductance
Author
Zhong, X. ; Gulwadi, S. ; Ioannou, D.E. ; Campisi, G.J. ; Hughes, H.L.
Author_Institution
George Mason Univ., Fairfax, VA, USA
fYear
1991
fDate
1-3 Oct 1991
Firstpage
78
Lastpage
79
Abstract
The dynamic transconductance technique is refined and used to obtain D it(E ) profiles covering much of the forbidden gap (from accumulation to depletion and weak inversion) of both (front and back) interfaces of a number of SIMOX (separation by implanted oxygen) chips as a function of SIMOX preparation and transistor fabrication technology and geometry. Typical results are shown which demonstrate the well-behaved bell shape G p /ω vs. ω experimental curves obtained both under `direct´ and `cross´ measurement conditions, leading to U-shape D it(E ) profiles. D it(E ) values range from mid 1010 to mid 1011 cm -2 eV-1 for the front interface, and about one order of magnitude higher for the back interface
Keywords
electron traps; energy gap; hole traps; insulated gate field effect transistors; interface phenomena; semiconductor device testing; semiconductor-insulator boundaries; SIMOX preparation; SiO2-Si; back interface; dynamic transconductance; forbidden gap; front interface; fully depleted SIMOX; interface traps; transistor fabrication technology; transistor geometry; trap density energy profiles; Character recognition; Equations; Fabrication; Geometry; Laboratories; MOSFET circuits; Shape measurement; Threshold voltage; Transconductance; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location
Vail Valley, CO
Print_ISBN
0-7803-0184-6
Type
conf
DOI
10.1109/SOI.1991.162865
Filename
162865
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