Title :
Interface trap density energy profiles Dit(E) in fully depleted SIMOX MOSFET´s by dynamic transconductance
Author :
Zhong, X. ; Gulwadi, S. ; Ioannou, D.E. ; Campisi, G.J. ; Hughes, H.L.
Author_Institution :
George Mason Univ., Fairfax, VA, USA
Abstract :
The dynamic transconductance technique is refined and used to obtain Dit(E) profiles covering much of the forbidden gap (from accumulation to depletion and weak inversion) of both (front and back) interfaces of a number of SIMOX (separation by implanted oxygen) chips as a function of SIMOX preparation and transistor fabrication technology and geometry. Typical results are shown which demonstrate the well-behaved bell shape Gp /ω vs. ω experimental curves obtained both under `direct´ and `cross´ measurement conditions, leading to U-shape D it(E) profiles. Dit(E ) values range from mid 1010 to mid 1011 cm -2 eV-1 for the front interface, and about one order of magnitude higher for the back interface
Keywords :
electron traps; energy gap; hole traps; insulated gate field effect transistors; interface phenomena; semiconductor device testing; semiconductor-insulator boundaries; SIMOX preparation; SiO2-Si; back interface; dynamic transconductance; forbidden gap; front interface; fully depleted SIMOX; interface traps; transistor fabrication technology; transistor geometry; trap density energy profiles; Character recognition; Equations; Fabrication; Geometry; Laboratories; MOSFET circuits; Shape measurement; Threshold voltage; Transconductance; Very large scale integration;
Conference_Titel :
SOI Conference, 1991. Proceedings, 1991., IEEE International
Conference_Location :
Vail Valley, CO
Print_ISBN :
0-7803-0184-6
DOI :
10.1109/SOI.1991.162865
