• DocumentCode
    1893951
  • Title

    An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

  • Author

    Kim, Chris H. ; Roy, Kaushik ; Hsu, Steven ; Krishnamurthy, Rain K. ; Borkar, Shekhar

  • Author_Institution
    Minnesota Univ., Minneapolis, MN, USA
  • fYear
    2005
  • fDate
    9-11 May 2005
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-Vt CMOS technology for accurately measuring process variation. Results based on measured leakage data show higher signal-to-noise ratio and reduced sensitivity to supply and P/N skew variations compared to prior designs.
  • Keywords
    CMOS integrated circuits; electric sensing devices; integrated circuit measurement; integrated circuit testing; leakage currents; 1.2 V; 90 nm; CMOS technology; measuring process variation; on-die CMOS leakage current sensor; sensitivity; signal to noise ratio; variable threshold voltage; CMOS process; CMOS technology; Circuit testing; Current measurement; Inverters; Leakage current; MOS devices; Mirrors; Sensor phenomena and characterization; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
  • Print_ISBN
    0-7803-9081-4
  • Type

    conf

  • DOI
    10.1109/ICICDT.2005.1502635
  • Filename
    1502635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1893951