DocumentCode :
1893951
Title :
An on-die CMOS leakage current sensor for measuring process variation in sub-90nm generations
Author :
Kim, Chris H. ; Roy, Kaushik ; Hsu, Steven ; Krishnamurthy, Rain K. ; Borkar, Shekhar
Author_Institution :
Minnesota Univ., Minneapolis, MN, USA
fYear :
2005
fDate :
9-11 May 2005
Firstpage :
221
Lastpage :
222
Abstract :
This paper describes an on-die leakage current sensor in 1.2V, 90nm dual-Vt CMOS technology for accurately measuring process variation. Results based on measured leakage data show higher signal-to-noise ratio and reduced sensitivity to supply and P/N skew variations compared to prior designs.
Keywords :
CMOS integrated circuits; electric sensing devices; integrated circuit measurement; integrated circuit testing; leakage currents; 1.2 V; 90 nm; CMOS technology; measuring process variation; on-die CMOS leakage current sensor; sensitivity; signal to noise ratio; variable threshold voltage; CMOS process; CMOS technology; Circuit testing; Current measurement; Inverters; Leakage current; MOS devices; Mirrors; Sensor phenomena and characterization; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference on
Print_ISBN :
0-7803-9081-4
Type :
conf
DOI :
10.1109/ICICDT.2005.1502635
Filename :
1502635
Link To Document :
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