DocumentCode :
18941
Title :
Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors
Author :
Hsieh, Tien-Yu ; Chang, Ting-Chang ; Chen, Y.-T. ; Liao, Po-Yung ; Chen, Tzu-Ching ; Tsai, M.-Y. ; Chen, Yen-Chi ; Chen, Bo-Wei ; Chu, Ann-Kuo ; Chou, Chin-Hui ; Chung, Wu-Chun ; Chang, Jung-Fang
Author_Institution :
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
Volume :
60
Issue :
5
fYear :
2013
fDate :
May-13
Firstpage :
1681
Lastpage :
1688
Abstract :
Electrical characteristics and the effect of hot-carriers are investigated in via-contact-type a-InGaZnO thin-film transistors. Current–voltage as well as capacitance–voltage measurements are utilized to investigate the impact of top gate bias on device characteristics as well as degradation behaviors caused by a hot-carrier stress. It is found that the redundant source/drain electrodes in via-contact type devices can screen the electric field established by a top gate bias and have significant influence on the device characteristics. Hot-carrier stress brings about electron trapping in the etch stop layer below the redundant electrodes, and this is further verified through modulating the energy band structure by applying a top gate bias during the capacitance–voltage measurement.
Keywords :
Hot carriers; Indium compounds; Thin films; Transistors; Dual gate; hot-carrier; indium gallium zinc oxide (IGZO); thin-film transistors (TFTs); via-contact;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2253611
Filename :
6497566
Link To Document :
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