An improved driving and protection circuit for reverse blocking IGBT

An improved driving and protection circuit for reverse blocking IGBT (RB-IGBT) is proposed in this paper. This scheme can reduce the RB-IGBT switching transition substantially without causing the increase of di/dt in turn-on transition and dv/dt in turn-off transition. The drive part of the proposed circuit is composed of a conventional push-pull output stage and two dynamic current sources - a current generator and a current sink. The push-pull stage works with conventional method while the current generator and current sink work primarily during switching transitions. A novel detecting and control circuit is implemented to control the two current sources. In this paper, a novel over-current and short-circuit protection method suitable for RB-IGBT is also implemented.