Output timing measurement using an Idd method

Author

Vollrath, Joerg

fYear

2003

fDate

28-29 July 2003

Firstpage

43

Lastpage

46

Abstract

The exact placement of the data output eye for high speed single and double data rate (SDR, DDR) synchronous dynamic random access memories (SDRAM) allows high speed operation. For the timing measurement method via current presented in this paper the tester drives data at the same time as the device. The current consumption of the device is depending on the overlap of the tester output waveform and the waveform of the data driven by the device under test (DUT). This paper presents the measurement method and results from a 128M x4 SDRAM and compares them to a traditional approach using a data strobe.

Keywords

DRAM chips; driver circuits; time measurement; timing; Idd method; current consumption; data output eye; data strobe; device under test; double data rate; high speed operation; output timing measurement; single data rate; synchronous dynamic random access memories; tester output waveform; timing measurement method; Area measurement; Circuit testing; Current measurement; Energy consumption; Power measurement; Random access memory; SDRAM; Semiconductor device measurement; Time measurement; Timing;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Technology, Design and Testing, 2003. Records of the 2003 International Workshop on

ISSN

1087-4852

Print_ISBN

0-7695-2004-9

Type

conf

DOI

10.1109/MTDT.2003.1222359

Filename

1222359