DocumentCode :
1894304
Title :
300C ferrite material for high temperature magnetics
Author :
Spyker, Russell ; Huth, Joe ; Mehdi, Lshaque ; Brockschmidt, Art
Author_Institution :
US Air Force Res. Lab., USA
Volume :
1
fYear :
2004
fDate :
20-25 June 2004
Firstpage :
155
Abstract :
The next generation of power electronics is likely to use high temperature capable silicon carbide semiconductors. To fully utilize the capabilities of these devices, high temperature magnetics and other passive components will be required. A 300C ferrite material has been developed to operate at over 300 degree C combined ambient and rise. Presently available ferrite materials have Curie temperatures of 250°C or lower and are optimized for use at temperatures of 100°C or less. This paper will discuss ferrite power materials developed by magnetics for use at frequencies above 200 kHz and temperatures of 300°C. An evaluation of this material has been performed using a 1.5 kW, 270 Vdc to 28 Vdc converter. Both test data and analysis are presented to show the material capability and techniques for fully utilizing the high temperature capabilities of the ferrite material. The test data and analysis includes a discussion of various winding and high temperature insulation techniques consistent with high voltage and power electronics high frequency magnetics issues. This program is being conducted under an Air Force Research Lab (AFRL) contract.
Keywords :
Curie temperature; carbon compounds; ferrites; power electronics; power transformer insulation; silicon compounds; transformer cores; transformer windings; wide band gap semiconductors; 1.5 kW; 270 to 28 V; 300 C; Air Force Research Lab; DC-DC converter; SiC; curie temperatures; ferrite power materials; high temperature insulation techniques; high temperature magnetics; passive components; power electronics; silicon carbide semiconductors; winding; Conducting materials; Data analysis; Electronic equipment testing; Ferrites; Frequency; Magnetic analysis; Magnetic materials; Power electronics; Semiconductor materials; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
ISSN :
0275-9306
Print_ISBN :
0-7803-8399-0
Type :
conf
DOI :
10.1109/PESC.2004.1355733
Filename :
1355733
Link To Document :
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