Title :
A 40 ns random access time low voltage 2Mbits EEPROM memory for embedded applications
Author :
Daga, Jean-Michel ; Papaix, Caroline ; Racape, Emmanuel ; Combe, Marylene ; Sialelli, Vincent ; Guichaoua, Jeanine
Author_Institution :
ATMEL, Rousset, France
Abstract :
2Mbits EEPROM memory has been designed using the ATMEL 0.18 μm embedded technology. On silicon program and read access time measurements are given, and an optimized production testing flow is proposed.
Keywords :
EPROM; embedded systems; memory architecture; parallel programming; production testing; random-access storage; 0.18 micron; 250 Kbyte; 40 ns; ATMEL embedded technology; EEPROM memory; electrically erasable PROM; memory architecture; optimized production testing flow; parallel programming; random access time; read access time; silicon program; Boosting; Charge pumps; Decoding; Delay; EPROM; Low voltage; Memory architecture; Silicon; Testing; Writing;
Conference_Titel :
Memory Technology, Design and Testing, 2003. Records of the 2003 International Workshop on
Print_ISBN :
0-7695-2004-9
DOI :
10.1109/MTDT.2003.1222365
