Title :
The Status of Semiconductor Device Modeling in the Classical Domain
Author_Institution :
Department of Electrical and Computer Engineering, Louisiana State University
Abstract :
Summary form only given. Device simulation requires solving carrier transport equations and Poisson´s equation. Beginning with the Boltzmann transport equation (BTE), several options are available to describe carrier transport, including the drift-diffusion approach, the momentum and energy balance equations, and Monte Carlo simulation. The limitations of the BTE and the regions of validity for several device simulation approaches for Si and GaAs are reviewed. Results for situations close to equilibrium and for an arbitrary distribution function are given.
Keywords :
Boltzmann equation; Computational modeling; Computer simulation; Distribution functions; Electrons; Gallium arsenide; Hot carrier effects; Photonic band gap; Poisson equations; Semiconductor device modeling;
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
DOI :
10.1109/SMS.1993.664531
