Title :
100 nm pHEMT MMIC technology
Author :
Ayzenshtat, G.I. ; Yushchenko, A.Yu. ; Ivashenko, A.I. ; Bozhkov, V.G.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
A robust and manufacturable high-performance 100-nm gate length AlGaAs/InGaAs pseudomorphic High-Electron Mobility Transistor (pHEMT) process is presented.
Keywords :
MMIC; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; AlGaAs-InGaAs; manufacturable high-performance gate length pseudomorphic high-electron mobility transistor process; pHEMT MMIC technology; size 100 nm to 150 nm; Electronic mail; Gallium arsenide; Indium gallium arsenide; Logic gates; PHEMTs; Robustness;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
