Title :
Current transport mechanisms in anisotype heterojunctions n-CdO/p-Si
Author :
Solovan, M.N. ; Brus, V.V. ; Maryanchuk, P.D.
Author_Institution :
Yuriy Fedkovych Chernivtsi Nat. Univ., Chernivtsi, Ukraine
Abstract :
n-CdO/p-Si heterojunction was prepared by means of the deposition of a cadmium oxide thin film (with n-type of conductivity) onto a polished polycrystalline silicon substrate (p-type of conductivity) using the spray-pyrolysis technique. I-V characteristics of the heterojunction were measured at different temperatures and the dominating current transport mechanisms were established at forward and reverse biases.
Keywords :
II-VI semiconductors; cadmium compounds; electrical conductivity; p-n heterojunctions; polishing; pyrolysis; semiconductor thin films; silicon; temperature measurement; CdO-Si; I-V characteristics; anisotype heterojunction; cadmium oxide thin film; conductivity; current transport mechanism; deposition; polished polycrystalline silicon substrate; spray-pyrolysis; temperature measurement; Conductivity; Heterojunctions; Photovoltaic cells; Silicon; Solar energy; Temperature measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
