Temperature control strategies for RTP systems

Author

Yu, Seungil ; Sorrell, F.Yates ; Keither, William J.

Author_Institution

North Carolina State Univ., Raleigh, NC, USA

fYear

1993

fDate

18-19 May 1993

Firstpage

229

Lastpage

234

Abstract

A simulation of rapid thermal processing (RTP) is made to investigate the accuracy of various control schemes. The simulated RTP process is chemical vapor deposition (CVD) of polycrystalline silicon over an oxide. The simulated control schemes are open loop control, pyrometer control, pyrometer control with corrected emissivity, and open loop control with the programmed lamp heating. Wafer temperature variation and final film thickness are predicted by the simulation. Based on these results, programmed open loop control is probably the best control scheme. An experiment confirms the results and shows reduced wafer temperature variation

Keywords

chemical vapour deposition; incoherent light annealing; integrated circuit manufacture; programmed control; pyrometers; rapid thermal processing; semiconductor technology; temperature control; temperature measurement; CVD; chemical vapor deposition; corrected emissivity; film thickness; programmed lamp heating; programmed open loop control; pyrometer control; rapid thermal processing simulation; simulated RTP process; simulated control schemes; temperature control strategies; wafer temperature; Computational modeling; Electrical resistance measurement; Open loop systems; Optical films; Optical sensors; Rapid thermal processing; Semiconductor device modeling; Temperature control; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Microelectronics Symposium, 1993., Proceedings of the Tenth Biennial

Conference_Location

Research Triangle Park, NC

ISSN

0749-6877

Print_ISBN

0-7803-0990-1

Type

conf

DOI

10.1109/UGIM.1993.297058

Filename

297058