Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology

Author

Ball, D.R. ; Warren, K.M. ; Weller, R.A. ; Reed, R.A. ; Kobayashi, A. ; Pellish, J.A. ; Mendenhall, M.H. ; Howe, C.L. ; Massengill, L.W. ; Schrimpf, R.D. ; Haddad, N.F.

Author_Institution

Inst. for Space & Defense Electron., Nashville

fYear

2005

fDate

19-23 Sept. 2005

Abstract

As devices scale to smaller dimensions, the probability of events other than direct ionization by the primary ion having an impact on circuit response increases, especially with high-Z materials located proximal to sensitive regions. In this work, nuclear reactions are integrated into the modeling of the SEU response of an SRAM cell using GEANT4-based simulations. The simulated transient response is compared to that obtained using a typical heavy ion model that includes only direct ionization.

Keywords

SRAM chips; ion beam effects; ionisation; radiation hardening (electronics); technology CAD (electronics); GEANT4-based simulations; TCAD Model; circuit response; direct ionization; heavy ion model; high-density single event upsets hardened SRAM technology; nuclear events; nuclear reactions; simulated transient response; Circuit simulation; Dielectric materials; Discrete event simulation; Inorganic materials; Ionization; Metallization; Monte Carlo methods; Nuclear power generation; Random access memory; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on

Conference_Location

Cap d´Agde

ISSN

0379-6566

Print_ISBN

978-0-7803-9502-2

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2005.4365566

Filename

4365566