DocumentCode
1894729
Title
1200 V high-side lateral MOSFET in junction-isolated power IC technology using two field-reduction layers
Author
Ajit, J.S. ; Kinzer, Dan ; Ranjan, Niraj
Author_Institution
International Rectifier, El Segundo, CA, USA
fYear
1993
fDate
18-20 May 1993
Firstpage
230
Lastpage
235
Abstract
A lateral n-channel MOSFET structure in junction-isolated power IC technology using a P-type field-reduction region over an N-type field-reduction region for high-side and low-side switching applications is described. The concept of using two field-reduction layers has been verified by two-dimensional device simulations and by fabricating devices with breakdown voltage in excess of 1200 V
Keywords
MOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; power integrated circuits; 1200 V; breakdown voltage; field-reduction layers; high-side lateral MOSFET; high-side switching applications; junction-isolated power IC technology; low-side switching applications; two-dimensional device simulations; Body regions; CMOS technology; Circuit simulation; Dielectric substrates; MOSFET circuits; Power MOSFET; Power integrated circuits; Power semiconductor switches; Rectifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location
Monterey, CA
ISSN
1063-6854
Print_ISBN
0-7803-1313-5
Type
conf
DOI
10.1109/ISPSD.1993.297075
Filename
297075
Link To Document