Title :
Influence of Laser Pulse Duration in Single Event Upset Testing
Author :
Douin, A. ; Pouget, V. ; Darracq, F. ; Lewis, D. ; Fouillat, P. ; Perdu, P.
Author_Institution :
Univ. Bordeaux 1, Bordeaux
Abstract :
Device simulations of laser induced SEU in an SRAM cell are performed with pulse durations from 100 fs to 100 mus. SEU threshold energy is notably dependent on the pulse duration. Two regimes are identified and modeled analytically and electrically.
Keywords :
SRAM chips; high-speed optical techniques; semiconductor device testing; SRAM cell; charge collection mechanisms; laser energy threshold; laser induced single event upset; laser pulse duration; Circuit testing; Laboratories; Laser beams; Laser modes; Optical pulse generation; Optical pulses; Pulse measurements; Random access memory; Semiconductor lasers; Single event upset; Critical charge; Device simulation; Laser testing; Pulse duration; Single Event Upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365567
