Combination field plate/field ring termination structures for integrated power devices

The issues associated with termination structure design for vertical, integrated power devices are defined. The interaction of the oxide thickness running over the device isolation and the breakdown voltage of the device is explored. In light of these constraints, a comparison of single field plate, two-level field plate, field ring only, and combination field plate/field ring termination structures is performed. Combination field plate/field ring structures are seen to provide significantly higher breakdown voltage than other structures while consuming little additional area. The simple fabrication and design constraints for combination field plate/field ring termination structures makes them attractive options for integrated as well as discrete power devices