DocumentCode
1894907
Title
Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits
Author
Useinov, Rustem G.
Author_Institution
Res. Inst. of Sci. Instrum., Lytkarino
fYear
2005
fDate
19-23 Sept. 2005
Abstract
The new model to characterize of radiation induced or single event late hup is developed. Analytical expressions for radiation dose rate and LET threshold have been obtained. The model fits the experimental data reasonably well.
Keywords
CMOS integrated circuits; flip-flops; integrated circuit modelling; monolithic integrated circuits; radiation effects; CMOS integrated circuits; LET threshold; analytical model; radiation dose; single event latchup; Analytical models; CMOS integrated circuits; Charge carrier processes; Electron emission; Equations; Equivalent circuits; Integrated circuit modeling; Semiconductor device modeling; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location
Cap d´Agde
ISSN
0379-6566
Print_ISBN
978-0-7803-9502-2
Electronic_ISBN
0379-6566
Type
conf
DOI
10.1109/RADECS.2005.4365574
Filename
4365574
Link To Document