Title :
Analytical Model of Radiation Induced or Single Event Latchup in CMOS Integrated Circuits
Author :
Useinov, Rustem G.
Author_Institution :
Res. Inst. of Sci. Instrum., Lytkarino
Abstract :
The new model to characterize of radiation induced or single event late hup is developed. Analytical expressions for radiation dose rate and LET threshold have been obtained. The model fits the experimental data reasonably well.
Keywords :
CMOS integrated circuits; flip-flops; integrated circuit modelling; monolithic integrated circuits; radiation effects; CMOS integrated circuits; LET threshold; analytical model; radiation dose; single event latchup; Analytical models; CMOS integrated circuits; Charge carrier processes; Electron emission; Equations; Equivalent circuits; Integrated circuit modeling; Semiconductor device modeling; Substrates; Transistors;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2005. RADECS 2005. 8th European Conference on
Conference_Location :
Cap d´Agde
Print_ISBN :
978-0-7803-9502-2
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2005.4365574
