Title :
Method of ohmic contact characterization from heat stability and contact resistance by example of contacts to SiC 6H
Author_Institution :
Lashkaryov Inst. of Semicond. Phys. of NAS of Ukraine, Kiev, Ukraine
Abstract :
Using contacts to silicon carbide as an example, a method of ohmic contact characterization from heat stability and contact resistance is proposed. The method is based on the known empirical dependences of (i) contact resistivity on the semiconductor doping level and (ii) ohmic contact degradation on time and temperature.
Keywords :
contact resistance; electrical resistivity; ohmic contacts; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; contact resistance; contact resistivity; empirical dependences; heat stability; ohmic contact characterization; ohmic contact degradation; semiconductor doping level; silicon carbide contacts; Annealing; Contact resistance; Materials; Nickel; Ohmic contacts; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
