DocumentCode :
1894983
Title :
New method of surface recombination velocity measurement for power device simulation
Author :
Yahata, A. ; Tholmann, K. ; Yamaguchi, M. ; Ohashi, H.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fYear :
1993
fDate :
18-20 May 1993
Firstpage :
154
Lastpage :
158
Abstract :
A novel method of surface recombination velocity measurement for evaluating high-voltage lateral power devices is presented. This method is based on the combination of experiment and simulation for the time decay of photoluminescence emitted from Si crystals. Good results were obtained for a Si crystal with an SiO2 cap
Keywords :
electron-hole recombination; elemental semiconductors; luminescence of inorganic solids; photoluminescence; power electronics; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; high-voltage lateral power devices; photoluminescence; power device simulation; surface recombination velocity measurement; time decay; Interface states; Laser excitation; Nitrogen; Optical filters; Optical pulses; Photoluminescence; Space vector pulse width modulation; Surface emitting lasers; Velocity measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
ISSN :
1063-6854
Print_ISBN :
0-7803-1313-5
Type :
conf
DOI :
10.1109/ISPSD.1993.297088
Filename :
297088
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1894983
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