Title :
Influence of positron annealing on static and microwave characteristics of low-frequence AlGaN/GaN HEMT
Author :
Torkhov, N.A. ; Gradoboev, A.V. ; Mihalitskiy, M.M.
Author_Institution :
Sci.- Res. Inst. of Semicond., Tomsk, Russia
Abstract :
Obtained results show, that used modes of positron annealing of low-frequency (1-3 GHz) HEMT lead to rising of power and current gains (Gmax and H21 respectively). The value of cutoff frequency Ft does not decrease, and the Fmax raised. According to S-parameters of low-frequency (1-3 GHz) HEMT at high-frequency (20-40 GHz) range, one can see parameters degradation of the used construction. To improve microwave HEMT in 20-40 GHz range, obviously, it is necessary to use high-frequency construction of heteroepitaxial structure and other modes of positron annealing.
Keywords :
III-V semiconductors; S-parameters; UHF field effect transistors; aluminium compounds; annealing; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; positrons; wide band gap semiconductors; AlGaN-GaN; S-parameters; frequency 1 GHz to 3 GHz; frequency 20 GHz to 40 GHz; heteroepitaxial structure; low-frequency HEMT; microwave HEMT; microwave characteristics; positron annealing; Aluminum gallium nitride; Annealing; Electronic mail; Gallium nitride; HEMTs; Positrons; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
Conference_Location :
Sevastopol, Crimea
Print_ISBN :
978-1-4673-1199-1
