• DocumentCode
    189502
  • Title

    Increasing photo-thermal efficiency of VO2-based devices using carbon nanotube thin-films

  • Author

    Tongyu Wang ; Torres, David ; Chuan Wang ; Sepulveda, Nelson

  • Author_Institution
    Electr. & Comput. Eng. Dept., Michigan State Univ., East Lansing, MI, USA
  • fYear
    2014
  • fDate
    2-5 Nov. 2014
  • Firstpage
    386
  • Lastpage
    389
  • Abstract
    This paper reports the first study on the use of single-wall carbon nanotubes (SWNTs) to reduce the amount of photo-thermal energy required to induce the phase transition in vanadium dioxide (VO2) thin film sensors. A SWNT thin-film prepared using vacuum filtration process was transferred onto a VO2 thin film. Owing to the superior light-absorption properties of SWNT thin-films, energy from a red light laser (650 nm) was efficiently harvested and converted to heat, which was then transferred from SWNT to VO2 to induce the phase transition. We have confirmed that the quality of the VO2 film was unaltered during the SWNT coating process, nor by the SWNT coating itself. These results show that the integration of SWNT films is an effective way to increase the efficiency of VO2-based optical sensing devices and could potentially enable triggering of the phase transition in VO2 films at ambient conditions, which would make low-power VO2-based non-volatile multifunctional memories a reality. In addition, by using sorted SWNTs with pre-defined chirality, VO2 sensors with tunable wavelength response could also be readily achieved.
  • Keywords
    carbon nanotubes; low-power electronics; optical sensors; photothermal effects; random-access storage; thin film sensors; vanadium compounds; C; SWNT coating process; VO2; carbon nanotube thin-films; light-absorption properties; low-power nonvolatile multifunctional memories; optical sensing devices; phase transition; photothermal efficiency; red light laser; single-wall carbon nanotubes; tunable wavelength response; vacuum filtration process; vanadium dioxide thin film sensors; wavelength 650 nm; Electrical resistance measurement; Films; Laser transitions; Measurement by laser beam; Resistance; Resistors; Temperature measurement; CNT; VO2;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SENSORS, 2014 IEEE
  • Conference_Location
    Valencia
  • Type

    conf

  • DOI
    10.1109/ICSENS.2014.6985015
  • Filename
    6985015