DocumentCode :
1895040
Title :
Progress in new materials for power electronics: SiC
Author :
Helbig, R.
Author_Institution :
Inst. of Appl. Phys., Erlangen Univ., Germany
fYear :
1993
fDate :
18-20 May 1993
Firstpage :
6
Lastpage :
11
Abstract :
Some general physical properties of the different polytopes of SiC are discussed. A complete set of parameters for 6H-SiC for the simulation of electronic devices is given. To demonstrate the simulation of devices, the p-n-n+ diode and the vertical power MOSFET made of 6H-SiC are discussed
Keywords :
power electronics; power transistors; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; 6H-polytypes; OSSI; PISCES; SiC polytypes; p-n-n+ diode; physical properties; power electronics materials; simulation of devices; vertical power MOSFET; Bonding; Chemicals; Crystalline materials; Crystals; Effective mass; Electrons; Photonic band gap; Piezoelectric materials; Semiconductor materials; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
ISSN :
1063-6854
Print_ISBN :
0-7803-1313-5
Type :
conf
DOI :
10.1109/ISPSD.1993.297097
Filename :
297097
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1895040
بازگشت