DocumentCode :
1895068
Title :
Electromagnetic scattering by a finite strip on a substrate
Author :
Marx, Egon
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2010
fDate :
11-17 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
Features on wafers manufactured by the semiconductor industry continue to decrease in size. Simulation is required to determine the dimensions of a feature from a microscope image when some of the dimensions are comparable to or significantly smaller than the wavelength of the light used in the microscope. Previously images of finite strips on a substrate have been approximated by those of infinite strips, which reduces to the solution of the two-dimensional scalar Helmholtz equations. If this simpler approach no longer gives accurate results, we have to consider scattering of monochromatic plane waves of circular frequency ω by finite strips, which requires the solution of the three-dimensional Maxwell equations. We use a generalization of the single-integral-equation formulation that reduces the number of unknowns on the interfaces in three-dimensional problems such as a particle in a layer, a doublet of spheres, and a finite strip on a substrate, where we show the integral equations for the unknown tangential vector fields on the boundaries and the simulation of image formation. Here we show details of the scattering by a finite strip, such as the parameters defining the configuration of an oblique strip, the handling of the surface divergence term, and the reduction to algebraic equations, including self-patch contributions.
Keywords :
algebra; electromagnetic wave scattering; semiconductor industry; strips; substrates; algebraic equations; electromagnetic scattering; finite strips; monochromatic plane; semiconductor industry; substrates; three-dimensional Maxwell equations; Electromagnetic scattering; Equations; Integral equations; Mathematical model; Strips; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2010 IEEE
Conference_Location :
Toronto, ON
ISSN :
1522-3965
Print_ISBN :
978-1-4244-4967-5
Type :
conf
DOI :
10.1109/APS.2010.5561960
Filename :
5561960
Link To Document :
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