• DocumentCode
    1895074
  • Title

    Synthesis of InSb nanowires in anodic alumina modified matrixes

  • Author

    Gorokh, G. ; Obukhov, I. ; Poznyak, Alexander ; Lozovenko, A. ; Zakhlebaeva, A. ; Sochneva, E.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    655
  • Lastpage
    658
  • Abstract
    The methods of formation of modified anodic alumina matrixes (AAM) without barrier layer with metal, semiconductor and metal-oxide conductive contacts in the bottom side of pores has been developed. Semiconductor InSb nanostructures were selectively grown in modified AAM-template using electrochemical deposition on these contacts. Investigations of structure of formed InSb nanowires arrays have been performed.
  • Keywords
    III-V semiconductors; alumina; electrochemical analysis; electrodeposition; indium compounds; nanofabrication; nanowires; semiconductor growth; semiconductor-insulator boundaries; InSb-Al2O3; barrier layer; electrochemical deposition; metal contacts; metal-oxide conductive contacts; modified AAM- template; modified anodic alumina matrixes; nanowire array structure synthesis; semiconductor contacts; semiconductor nanostructured materials; Active appearance model; Electronic mail; Fabrication; Nanowires; Nickel; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336135