An integrated microwave power and frequency sensor based on GaAs MMIC process and MEMS technology

Author

Zhenxiang Yi ; Xiaoping Liao

Author_Institution

Key Lab. of MEMS, Southeast Univ., Nanjing, China

fYear

2014

fDate

2-5 Nov. 2014

Firstpage

408

Lastpage

411

Abstract

In this paper, a novel integrated sensor for microwave power and frequency measurement is proposed for 1-10GHz application. In this device, the incident power is dissipated to heat by loaded resistors, and then detected indirectly by output voltage based on Seebeck effect. A MEMS coupler is designed over the CPW transmission line and the coupled power varies with the frequency of the signal. Therefore, by measuring the coupled power, the frequency of the signal can be deduced. This integrated power and frequency sensor is fabricated by GaAs MMIC process and MEMS technology. The measured return loss is -26dB at 1GHz and -22dB at 10GHz. The power measurement indicates that the sensitivity is close to 0.116mV/mW at 1GHz and 0.110mV/mW at 10GHz. The frequency measurement is performed and the sensitivity is close to 0.035mV/GHz under the incident power of 60mW.

Keywords

III-V semiconductors; MMIC; Seebeck effect; UHF detectors; frequency measurement; gallium arsenide; microsensors; microwave detectors; microwave measurement; power measurement; waveguide couplers; GaAs; MEMS coupler; MMIC process; Seebeck effect; coplanar waveguide transmission line; frequency 1 GHz to 10 GHz; integrated microwave power sensor; loaded resistor; loss 22 dB; loss 26 dB; microwave frequency sensor; power 60 mW; Frequency measurement; Micromechanical devices; Microwave circuits; Microwave communication; Microwave measurement; Transmission line measurements; GaAs MMIC; MEMS; integrated sensor; microwave frequency; microwave power;

fLanguage

English

Publisher

ieee

Conference_Titel

SENSORS, 2014 IEEE

Conference_Location

Valencia

Type

conf

DOI

10.1109/ICSENS.2014.6985021

Filename

6985021