• DocumentCode
    1895134
  • Title

    PVD silicon carbide as a thin film packaging technology for antennas on LCP substrates for harsh environments

  • Author

    Scardelletti, Maximilian C. ; Stanton, John W. ; Ponchak, George E. ; Jordan, Jennifer L. ; Zorman, Christian A.

  • Author_Institution
    NASA Glenn Res. Center, Cleveland, OH, USA
  • fYear
    2010
  • fDate
    10-14 Jan. 2010
  • Firstpage
    72
  • Lastpage
    75
  • Abstract
    This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.
  • Keywords
    antenna radiation patterns; coplanar waveguides; liquid crystal polymers; planar antennas; slot antennas; substrates; vapour deposition; LCP substrates; PVD silicon carbide; coplanar waveguide; dual frequency folded slot antennas; harsh environments; liquid crystal polymer substrates; microfabricated planar antennas; physical vapor deposition; polymeric substrates; radiation patterns; return loss; silicon carbide films; thin film packaging; Atherosclerosis; Liquid crystal polymers; Packaging; Polymer films; Radio frequency; Semiconductor thin films; Silicon carbide; Slot antennas; Sputtering; Substrates; folded slot antenna; liquid crystal polymer; physical vapor deposition; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium (RWS), 2010 IEEE
  • Conference_Location
    New Orleans, LA
  • Print_ISBN
    978-1-4244-4725-1
  • Electronic_ISBN
    978-1-4244-4726-8
  • Type

    conf

  • DOI
    10.1109/RWS.2010.5434263
  • Filename
    5434263