• DocumentCode
    1895150
  • Title

    Formation of straight-through pores in silicon substrates for 3-D metal interconnections

  • Author

    Lazarouk, S.K. ; Dolbik, A.V. ; Stepanova, L.I. ; Bodryh, T.I. ; Turtsevich, A.S. ; Shvedau, S.V. ; Labunov, V.A.

  • Author_Institution
    Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2012
  • fDate
    10-14 Sept. 2012
  • Firstpage
    665
  • Lastpage
    666
  • Abstract
    Silicon substrates with ordered pores, which go through the whole sample, have been fabricated for 3-D metal interconnections. The inter-pore distance can be ranged from 4 to 10 μm. The thickness of silicon substrate can reach up to 200-300 μm. The ordered porous structures are obtained by a photolithographic process.
  • Keywords
    interconnections; photolithography; silicon; 3D metal interconnections; Si; distance 4 mum to 10 mum; interpore distance; photolithographic process; silicon substrates; straight-through pores formation; Copper; Educational institutions; Electronic mail; Silicon; Substrates; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2012 22nd International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-1-4673-1199-1
  • Type

    conf

  • Filename
    6336138
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1895150