Title :
An analytical model of IGBTs with low emitter efficiency
Author :
Kraus, R. ; Hoffmann, K.
Author_Institution :
Univ. of Bundeswehr Munich, Neubiberg, Germany
Abstract :
An IGBT (insulated-gate bipolar transistor) model has been developed which describes the static and dynamic characteristics of IGBTs with low emitter efficiency and high charge carrier lifetime. Simple equations for the IGBT current and stored charge are obtained from calculations that take into account the dynamic behavior of the charge carriers which are injected into the base layer. The model has been implemented in the circuit simulator SABER. Simulation results show that measured IGBT characteristics like on-state voltage, storage time and tail current are well reproduced. The model can be enhanced to include the other types of IGBTs if the recombination term p/τ is not neglected
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT; SABER; analytical model; circuit simulator; dynamic characteristics; high charge carrier lifetime; low emitter efficiency; on-state voltage; power transistor; static characteristics; storage time; stored charge; tail current; Analytical models; Charge carrier lifetime; Charge carriers; Circuit simulation; Current measurement; Equations; Insulated gate bipolar transistors; Insulation; Time measurement; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297102
