An analytical model of IGBTs with low emitter efficiency

Author

Kraus, R. ; Hoffmann, K.

Author_Institution

Univ. of Bundeswehr Munich, Neubiberg, Germany

fYear

1993

fDate

18-20 May 1993

Firstpage

30

Lastpage

34

Abstract

An IGBT (insulated-gate bipolar transistor) model has been developed which describes the static and dynamic characteristics of IGBTs with low emitter efficiency and high charge carrier lifetime. Simple equations for the IGBT current and stored charge are obtained from calculations that take into account the dynamic behavior of the charge carriers which are injected into the base layer. The model has been implemented in the circuit simulator SABER. Simulation results show that measured IGBT characteristics like on-state voltage, storage time and tail current are well reproduced. The model can be enhanced to include the other types of IGBTs if the recombination term p/τ is not neglected

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device models; IGBT; SABER; analytical model; circuit simulator; dynamic characteristics; high charge carrier lifetime; low emitter efficiency; on-state voltage; power transistor; static characteristics; storage time; stored charge; tail current; Analytical models; Charge carrier lifetime; Charge carriers; Circuit simulation; Current measurement; Equations; Insulated gate bipolar transistors; Insulation; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297102

Filename

297102