Title :
A study on the short circuit destruction of IGBTs
Author :
Yamashita, J. ; Uenishi, A. ; Tomomatsu, Y. ; Haruguchi, H. ; Takahashi, H. ; Takata, I. ; Hagino, H.
Author_Institution :
Mitsubishi Electric Corp., Fukuoka, Japan
Abstract :
The short-circuit destruction of class n-ch 600-V IGBTs (insulated-gate bipolar transistors) is investigated experimentally and analyzed with the help of device simulation, focusing on three major destruction modes (power constant, energy constant, and turn-off destruction). Measured power dissipation for power constant destruction is 2000~2400 kW/cm2, which coincides with the simulation result. The energy constant destruction and turn-off destruction are found to depend on the thermal effect. The critical temperature for destruction is predicted to be 350°C
Keywords :
insulated gate bipolar transistors; power transistors; semiconductor device models; short-circuit currents; 350 C; 600 V; IGBT; critical temperature for destruction; destruction modes; device simulation; energy constant destruction; power constant destruction; power dissipation; power transistor; short circuit destruction; thermal effect; turn-off destruction; Analytical models; Bipolar transistors; Circuit simulation; Insulated gate bipolar transistors; Large scale integration; Power dissipation; Power engineering and energy; Research and development; Temperature; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297103
