A study on the short circuit destruction of IGBTs

Author

Yamashita, J. ; Uenishi, A. ; Tomomatsu, Y. ; Haruguchi, H. ; Takahashi, H. ; Takata, I. ; Hagino, H.

Author_Institution

Mitsubishi Electric Corp., Fukuoka, Japan

fYear

1993

fDate

18-20 May 1993

Firstpage

35

Lastpage

40

Abstract

The short-circuit destruction of class n-ch 600-V IGBTs (insulated-gate bipolar transistors) is investigated experimentally and analyzed with the help of device simulation, focusing on three major destruction modes (power constant, energy constant, and turn-off destruction). Measured power dissipation for power constant destruction is 2000~2400 kW/cm², which coincides with the simulation result. The energy constant destruction and turn-off destruction are found to depend on the thermal effect. The critical temperature for destruction is predicted to be 350°C

Keywords

insulated gate bipolar transistors; power transistors; semiconductor device models; short-circuit currents; 350 C; 600 V; IGBT; critical temperature for destruction; destruction modes; device simulation; energy constant destruction; power constant destruction; power dissipation; power transistor; short circuit destruction; thermal effect; turn-off destruction; Analytical models; Bipolar transistors; Circuit simulation; Insulated gate bipolar transistors; Large scale integration; Power dissipation; Power engineering and energy; Research and development; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297103

Filename

297103