Title :
The IGBT with monolithic overvoltage protection circuit
Author :
Yamazaki, Tomoyuki ; Seki, Yasukazu ; Hoshi, Yasuyuki ; Kumagai, Naoki
Author_Institution :
Fuji Electric Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
A novel IGBT (insulated-gate bipolar transistor) with a monolithic overvoltage protection circuit has been developed to obtain high resistance to overvoltage stress. This device is characterized by novel integration of an avalanche diode with an IGBT structure. The conventional IGBT process can be used to fabricate this device without any additional photomasks. Since it exhibits a large safe operating area, this device can be applied not only to a soft switching application like a voltage resonant circuit but also to a hard switching application like a snubberless inductive load circuit
Keywords :
avalanche diodes; insulated gate bipolar transistors; overvoltage protection; power integrated circuits; power transistors; IGBT; avalanche diode; hard switching application; monolithic overvoltage protection circuit; snubberless inductive load circuit; soft switching application; voltage resonant circuit; Character generation; Cities and towns; Diodes; Equivalent circuits; Insulated gate bipolar transistors; Laboratories; Protection; RLC circuits; Research and development; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297104
