Title :
A comparison of the switching behavior of IGBT and MCT power devices
Author :
Dettmer, H. ; Krumbein, U. ; Lendenmann, H. ; Müller, S. ; Fichtner, W. ; Bauer, F. ; Lilja, K. ; Stockmeier, T.
Author_Institution :
Integrated Syst. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dynamic avalanche phenomena than the MCT. It is also shown that the avalanche-injected carriers can be removed by shorting the anode layer, resulting in a much higher turn-off performance for both devices. Because of the lower charge and therefore the higher dV/dt , the ionization rate is higher in the IGBT than in the MCT
Keywords :
impact ionisation; insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor switches; switching; thyristors; IGBT; MOS-controlled thyristors; anode layer; device simulation; dynamic avalanche phenomena; high-voltage; ionization rate; shorting; turn-off curves; Anodes; Charge carrier processes; Circuits; Current density; Electric variables measurement; Insulated gate bipolar transistors; Ionization; Performance evaluation; Power measurement; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297107
