Turn-off failures in individual and paralleled MCTs

Author

Afridi, Khurram K. ; Kassakian, John G.

Author_Institution

Lab. for Electromagn. & Electron. Syst., MIT, Cambridge, MA, USA

fYear

1993

fDate

18-20 May 1993

Firstpage

60

Lastpage

65

Abstract

A turn-off failure mode in individual MCTs (MOS-controlled thyristors) initiated by a long gate voltage rise-time is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated, in which the slower of the two MCTs fails to turn off. It is caused by the Miller effect, which decreases the turn-off gate voltage rise-time for the device with the longer turn-off delay

Keywords

electrical faults; failure analysis; metal-insulator-semiconductor devices; semiconductor switches; thyristors; MOS-controlled thyristors; Miller effect; differential failure mode; long gate voltage rise-time; paralleled devices; turn-off current crowding; turn-off failure mode; Anodes; Circuit testing; Electromagnetic analysis; Failure analysis; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Proximity effect; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on

Conference_Location

Monterey, CA

ISSN

1063-6854

Print_ISBN

0-7803-1313-5

Type

conf

DOI

10.1109/ISPSD.1993.297108

Filename

297108