Title :
Turn-off failures in individual and paralleled MCTs
Author :
Afridi, Khurram K. ; Kassakian, John G.
Author_Institution :
Lab. for Electromagn. & Electron. Syst., MIT, Cambridge, MA, USA
Abstract :
A turn-off failure mode in individual MCTs (MOS-controlled thyristors) initiated by a long gate voltage rise-time is identified and analyzed. It is shown to be caused by turn-off current crowding in the MCT. In addition, a differential failure mode in paralleled devices is demonstrated, in which the slower of the two MCTs fails to turn off. It is caused by the Miller effect, which decreases the turn-off gate voltage rise-time for the device with the longer turn-off delay
Keywords :
electrical faults; failure analysis; metal-insulator-semiconductor devices; semiconductor switches; thyristors; MOS-controlled thyristors; Miller effect; differential failure mode; long gate voltage rise-time; paralleled devices; turn-off current crowding; turn-off failure mode; Anodes; Circuit testing; Electromagnetic analysis; Failure analysis; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Proximity effect; Thyristors; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-1313-5
DOI :
10.1109/ISPSD.1993.297108
