DocumentCode :
1895282
Title :
Modeling of High Energy Transport in Silicon by Means of the Monte Carlo Method
Author :
Sangiorgi, E. ; Fiegna, C. ; Abramo, A.
Author_Institution :
Dept. of Electronics, University of Bologna, Italy
fYear :
1993
fDate :
6-7 March 1993
Firstpage :
17
Lastpage :
20
Keywords :
Acoustic scattering; Anisotropic magnetoresistance; Boltzmann equation; Electrons; Integrated circuit modeling; Microscopy; Optical scattering; Phonons; Semiconductor process modeling; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Modeling & Simulation, 1993. SMS Technical Digest. 1993 Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-1225-2
Type :
conf
DOI :
10.1109/SMS.1993.664534
Filename :
664534
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1895282
بازگشت